Local Stress Measurement in MEMS Structures using Micro Raman Spectroscopy

Evaluating local stress in the microstructure is in high demand for designing and manufacturing MEMS and assessing the reliability of the MEMS. When a static tensile/compress stress is applied to the single-crystalline silicon (SCS) microstructure, the wavenumbers of the peak of the Raman spectrum are known to decrease/increase in proportion to the stress. In this study, the Raman spectrum of the support beam of the swinging fan-shaped resonator of SCS is analyzed in order to develop the method of evaluating the local stress of a resonating microstructure.