Evaluating local stress in the microstructure is in high demand for designing and manufacturing MEMS and assessing the reliability of the MEMS. When a static tensile/compress stress is applied to the single-crystalline silicon (SCS) microstructure, the wavenumbers of the peak of the Raman spectrum are known to decrease/increase in proportion to the stress. In this study, the Raman spectrum of the support beam of the swinging fan-shaped resonator of SCS is analyzed in order to develop the method of evaluating the local stress of a resonating microstructure.
