Thermal properties evaluation of SOI-MEMS based nanogap with cleavage plane for thermionic generation

Thermionic generation generates electricity by collecting thermionic electrons emitted from the high temperature emitter with the opposite collector. Thermionic generation requires a high temperature of 1000 °C, but when the distance between the emitter and the collector reduces to the nanoscale, that is, by using the nanogap, it is possible to generate at room temperature by the quantum effect. However, there are many unclear points about the quantum effect between nanogap. In this study, nanogaps are fabricated by cleaving single crystal silicon specimens using MEMS, and their physical properties are evaluated.


  • Thermionic generation material
  • Device for evaluating near-field radiative transfer via nanogap
  • Electron cooling device